Single-gate SOI MOSFET has been proposed to alleviate scaling limit of bulk
MOSFETs. We show an analytical model for threshold voltage for the device considering
two-dimensional effects in both SOI and buried oxide layers. The model explains the
dependence of short channel effects on the device parameters of channel-doping
concentration, gate oxide, SOI, and buried oxide thicknesses, which agree well with
numerical data.
Keywords: Characteristic length, Fully-depleted, Gate length, Poisson equation,
Scaling theory, Short channel effects, Short channel immunity, SOI, Subthreshold
swing, Surface potential, Threshold voltage.
