Metal-oxide-semiconductor field-effect transistor (MOSFET) is the most
important device in VLSI (very-large-scale integrated circuit). The fundamental part of
MOSFET is MOS diode, and we analyze the surface potential model of the diode,
which emerges threshold voltage. We then analyze the drain current model considering
carrier velocity saturation at the drain edge. We further analyze channel length
modulation, velocity overshoot, and source-drain series resistance. We finally show the
scaling theory of the device, which shows a guide line to minimize the device ensuring
device operation.
Keywords: Channel length modulation, Depletion approximation, Drain current,
Electric field dependent carrier velocity, Electron affinity, Flat band state, Gradual
channel approximation, MOS diode, MOSFET, Oxide charge, Poisson equation,
Scaling theory, Scattering theory, Source/drain resistance, Subthreshold swing,
Vacuum energy level, Velocity overshoot, Work function.
