Oxidation model is derived by considering diffusion fluxes in gas phase
atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at
SiO2/Si interface. This model gives simple time dependence of growing SiO2 layer
thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the
redistributed profile as moving boundary one, and derive the corresponding model. The
model well predicts B depletion at the SiO2/Si interface.
Keywords: Oxidation, segregation, SiO2, VLSI, MOS, chemical reaction,
redistribution, surface, mass-transfer constant, Henry’s law, ideal gas law, SiO2/Si
interface, linear dependence, parabolic dependence, Massoud model.
