We should determine various ambiguous physical parameters of the transient diffusion (TED) models associated with paring to understand TED fully. On the other hand, we can only obtain total impurity concentration profile data which lack paring information. We should guess the paring parameters from total redistributed impurity concentration profiles. The difficulty that fundamental data can only be evaluated at low-temperature regions also exist, that is, we cannot simply relate the profiles to a target temperature set at practical temperatures of about 1000°C. This means that the TED starts and ends in the ramping process at the target temperature. Therefore, we show TED data at low temperatures, and clarify its prominent features. The characteristics at high temperatures can be evaluated by extrapolating the parameter values.
Keywords: Diffusion, transient enhanced diffusion, oxidation, point defects, ion implantation, interstitial Si, vacancy, rapid annealing, ramp up rate, redistribution, shallow junction, VLSI process, amorphous/crystal interface, diffusion length, clusters, solid solubility, B marker layer.
