In this section, we consider reaction between impurity, point defects, and
charges in diffusion phenomenon and diffusion equations for both of impurity and point
defects. There are many levels of sophistication of treatment of the interaction of impurity
and point defects. We perform approximations step by step, and derive diffusion models
in various supplication levels.
Keywords: Ion implantation, diffusion, transient enhanced diffusion, pairing,
point defects, diffusion flux, diffusivity, thermal equilibrium, electric field,
mobility, Boltzmann constant, Einstein relationship, electron, hole, interstitial Si,
vacancy, balance equation, five stream model, three stream model.
