Ion implantation profiles are expressed by the Pearson function with first,
second, third and fourth moment parameters of Rp , ΔRp , γ , and β. We can derive
an analytical model for these profile moments by solving a Lindhard-Scharf-Schiott
(LSS) integration equation using perturbation approximation. This analytical model
reproduces Monte Carlo data which were well calibrated to reproduce a vast
experimental database. The extended LSS theory is vital for instantaneously predicting
ion implantation profiles with any combination of incident ions and substrate atoms
including their energy dependence.
Keywords: Ion implantation, LSS theory, amorphous, Monte Carlo, nuclear
stopping power, electron stopping power, range, projected range, skewness,
kurtosis, lateral straggling, Thomas-Fermi potential, ZBL potential, nuclear cross
section, electron cross section, cross section.
