An analytical model with lateral straggling parameters was developed to
describe the tilt dependence of ion-implantation profiles. There are three parameters
associated with depth-dependent lateral straggling into the model. On the basis of
comparison between experimental and analytical data, a database of ion-implantation
profiles that includes lateral-straggling parameters have established. The data with tilt 0°
were evaluated using off angle substrates.
Keywords: Ion implantation, lateral straggling, effective gate length, short channel
effects, MOSFETs, lateral penetration, lateral resolution, SIMS, tilt, tail function,
Pearson function, Gaussian function, joined half Gauss, error function, amorphous
layer, channeling.
