Effect of external electric field on formation of stressed interfaces in heterostructures
grown by molecular beam epitaxy is considered. Ion implantation technology and mechanically
induced deformations are appeared to be effective tools applied to manufacture semiconductor-based
active elements. Indentation seems to be an important instrument for preparing barrier structures with
unique charge carriers transport properties. Ion implantation technique makes it possible to form
additional junctions in the implanted crystal matrix which are very important for the increase of
efficiency of conventional solar cells.
