This chapter reviews different technologies for tailoring Electromagnetic
BandGap (EBG) of some materials and their primary applications. Recently, nitride-based materials have been widely used because of their high emission efficiency.
InxGa1-xN/GaN heterostructures (Gallium nitride) play a significant attraction due to the
terahertz (THz) emission. InxGa1-xN/GaN heterostructures can be tailored in a wide
emission range by the variation of structure, size, and composition, resulting in
excellent laser and light-emitting devices. Ultrafast optical excitation of such types of
structures leads to large THz electromagnetic emissions. In some cases, the EBG of
graphene has adopted a square open-loop shape with a ground plane, which displays
good characteristics in dynamically adjusting the electromagnetic wave propagation in
the THz range. The EBG structure is being progressively used because of its unique
electromagnetic features. Due to the distinguished features of the bandgap for the
emission of electromagnetic waves, it is used in various applications, such as high-performance microstrip antennas and low-profile antennas.
Keywords: Electromagnetic bandgap (EBG), Graphene, Negative refractive index, Nitride materials, Terahertz emission.
